Document
MCP87030
High-Speed N-Channel Power MOSFET
Features:
• Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) • Low Series Gate Resistance (RG) • Fast Switching • Capable of Short Dead-Time Operation • RoHS Compliant
Applications:
• Point-of-Load DC-DC Converters • High-Efficiency Power Management in Servers,
Networking and Automotive Applications
Package Type
PDFN 5 x 6
Description:
The MCP87030 is an N-Channel power MOSFET in a popular PDFN 5 mm x 6 mm package. Advanced packaging and silicon processing technologies allow the MCP87030 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low FOM of the MCP87030 allows high efficiency power conversion with reduced switching and conduction losses.
S1 S2 S3 G4
8D 7D 6D 5D
Product Summary Table: Unless otherwise indicated, TA = +25°C
Parameters
Sym. Min. Typ. Max. Units
Conditions
Operating Characteris.