MCP87055

MCP87055 High-Speed N-Channel Power MOSFET Features Low Drain-to-Source On Resistance (RDS(ON)) Low Total Gate Charge (QG) and Gate-to-Drain Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation ROHS Compliant Applications Point-of-Load DC-DC Converters High Efficiency Power Management in Servers, Networking, and Automotive Applications Package Type PDFN 3.3 x 3.3 Description The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87055 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low Figure of Merit of the MCP87055 allows high-efficiency power conversion with reduced switching and conduction losses. S1 S2 S3 G4 8D 7D 6D 5D Product Summary Table: Unless otherwise indicated, TA = +25˚C Parameters Sym Min Typ Max Units Conditions Op...