High-Speed N-Channel Power MOSFET
MCP87055
High-Speed N-Channel Power MOSFET
Features
• Low Drain-to-Source On Resistance (RDS(ON)) • Low Total Gate Cha...
Description
MCP87055
High-Speed N-Channel Power MOSFET
Features
Low Drain-to-Source On Resistance (RDS(ON)) Low Total Gate Charge (QG) and Gate-to-Drain
Charge (QGD) Low Series Gate Resistance (RG) Fast Switching Capable of Short Dead-Time Operation ROHS Compliant
Applications
Point-of-Load DC-DC Converters High Efficiency Power Management in Servers,
Networking, and Automotive Applications
Package Type
PDFN 3.3 x 3.3
Description
The MCP87055 device is an N-Channel power MOSFET in a popular PDFN 3.3 mm x 3.3 mm package. Advanced packaging and silicon processing technologies allow the MCP87055 to achieve a low QG for a given RDS(on) value, resulting in a low Figure of Merit (FOM). Combined with low RG, the low Figure of Merit of the MCP87055 allows high-efficiency power conversion with reduced switching and conduction losses.
S1 S2 S3 G4
8D 7D 6D 5D
Product Summary Table: Unless otherwise indicated, TA = +25˚C
Parameters
Sym Min Typ Max Units
Conditions
Op...
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