isc Silicon NPN Power Transistors
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining V...
isc Silicon
NPN Power
Transistors
DESCRIPTION ·DC Current Gain -hFE = 30(Min)@ IC= 0.3A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 100V(Min) ·Complement to Type MJD42C ·DPAK for Surface Mount Applications ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation APPLICATIONS ·Designed for use in general purpose amplifer and low speed
switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj
Junction Temperature
2
A
20 W
1.75
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
6.25 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient 71.4 ℃/W
MJD41C
isc website: www.iscsemi.com
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isc Silicon
NPN Power
Transistors
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 30mA; IB= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 0.6A
VBE(on) Base-Emitter On Voltage
IC= 6A; VCE= 4V
ICBO
Collector Cutoff Current
VCB= 100V; IE= 0
ICEO
Collector Cutoff Current
VCE= 60V; IB= 0
IEBO
Emi...