MJE340

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE340 TO126 Plastic Package ECB For use in High Voltage General Purpose Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector Emitter Voltage Collector Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Derate above 25ºC Operating And Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC PD PD Tj, Tstg VALUE 300 300 3.0 500 1.25 10 20 0.16 - 65 to +150 THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) 100 6.25 ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Emitter Sustaining Voltage *VCEO (sus) IC=1mA, IB=0 Collector Cut Off Current ICBO VCB=300V, IE=0 Emitter Cut Off Current IEBO VEB=3V, IC=0 DC Current Gain hFE IC=50mA, VCE=10V MI...