Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL SILICON POWER T...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP EPITAXIAL SILICON POWER
TRANSISTOR
MJE350
TO126 Plastic Package
ECB Designed for use in Line-Operated Applications sush as Low Power, Line- Operated Series Pass and Switching
Regulators
ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Continuous Power Dissipation @ Ta=25ºC
Derate above 25ºC Power Dissipation @ Tc=25ºC
Derate above 25ºC Operating And Storage Junction Temperature Range
SYMBOL VCEO VCBO VEBO IC PD
PD
Tj, Tstg
VALUE 300 300 3.0 500 1.25 10 20 0.16
- 65 to +150
UNIT V V V mA W
mW/ºC W
W/ºC
ºC
THERMAL CHARACTERISTICS Junction to Ambient in free air
Junction to Case
Rth (j-a) Rth (j-c)
100 6.25
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Sustaining Voltage
VCEO (sus)
IC=1mA, IB=0
Collector Cut Off Current
ICBO ...