MJE521

isc Silicon NPN Power Transistor MJE521 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 40 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 1A ·Complement to Type MJE371 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general−purpose amplifier and switching circuits applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 4 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak 8 A IB Base Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 2 A 40 W 150 ℃ Tstg Storage Temperature Range -65~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX UNIT 3.12 ℃/W isc Website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA; IB= 0 ICBO Collector Cutoff Current VCB= 30V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 1 A ; VCE= 1V MJE521 MIN MAX UNIT 40 V 0.1 mA 0.1 mA 40 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is present...