MJE9780

isc Silicon PNP Power Transistor MJE9780 DESCRIPTION ·Standard TO–220 Package ·Gain Range of 50 – 200 at 500 mAdc/10 volts ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed forvertical output of 14–inch to 17–inch televisions and CRT monitors, as well as other applications requiring a 150 volt PNP transistor. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V VCEO Collector-Emitter Voltage -150 V VEBO Emitter-Base Voltage -6 V IC Collector Current-Continuous -3 A ICM Collector Current-Peak PC Total Power Dissipation @ TC=25℃ TJ Junction Temperature -5 A 40 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 3.12 UNIT ℃/W isc Website：www.iscsemi.com 2 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor MJE9780 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= -50mA ; IB= 0 -150 V V(BR)EBO Emitter-Base Breakdown Voltage IE= -5mA ; IC= 0 -6 V VCE(sat) Collector-Emitter Saturation Voltage IC= -0.5A; IB= -50mA -0.8 V VBE(on) Base-Emitter On Voltage IC= -0.5A ; VCE= -4V -1.5 V ICBO Collector Cutoff Current VCB= -150V ; IE= 0 -10 μA IEBO Emitter Cutoff Current VEB= -5V; IC= 0 -10 μA hFE 1 DC Current G...