MJH11020

INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor isc Product Specification MJH11020 DESCRIPTION ·High DC Current Gain- : hFE = 400(Min)@ IC= 10A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 200V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 2.5V(Max)@ IC= 10A = 4.0V(Max)@ IC= 15A ·Complement to Type MJH11019 APPLICATIONS ·Designed for general purpose amplifiers ,low frequency switching and motor control applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VCBO Collector-Base Voltage 200 VCEO Collector-Emitter Voltage 200 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 15 ICM Collector Current-Peak 30 IB Base Current- Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 0.5 150 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 0.83 ℃/W isc w...