isc Silicon NPN Power Transistor
DESCRIPTION •Total Harmonic Distortion Characterized • High DC Current Gain –
hFE = 20...
isc Silicon
NPN Power
Transistor
DESCRIPTION Total Harmonic Distortion Characterized High DC Current Gain –
hFE = 20 Min @ I C = 8 Adc ·Complement to Type MJW21193 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power audio output,disk head positioners and linear applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
400
V
VCEO Collector-Emitter Voltage
250
V
VEBO Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
16
A
ICM
Collector Current-Pulse
30
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
5
A
200
W
150
℃
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
-65~150
℃
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case
0.7 ℃/W
Rth j-a Thermal Resistance,Junction to Ambient
40 ℃/W
MJW21194
isc Website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 8A; IB= 0.8A
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 16A; IB= 3.2A
VBE(on) Base-Emitter On Voltage
IC= 8A; VCE= 5V
ICBO
Collector Cutoff Current
VCB= 400V; IE= 0
ICEO
Collector Cutoff Current
VCE= 200V; IE= 0
IEBO
Emitt...
