Power MOSFETs. IRF340 Datasheet

IRF340 MOSFETs. Datasheet pdf. Equivalent


ART CHIP IRF340
IRF340-343/IRF740-743 T-39-13
MTM8N35/8N40
N-Channel Power MOSFETs
10A, 350V/400V
Description
These devices are n-channel, enhancement mode, power
MOSFETs designed especially for high voltage, high speed
applications, such as off-line switching power supplies, UPS,
AC and DC motor controls, relay and solenoid drivers.
z VGS Rated at ±20V
z Silicon Gate for Fast Switching Speeds
z IDSS, VDS(on), SOA and VGS(th) Specified at Elevated
Temperature
z Rugged
TO-204AA
IRF340
IRF341
IRF342
IRF343
MTM8N35
MTMT8N40
TO-220AB
IRF740
IRF741
IRF742
IRF743
Maximum Ratings
Symbol
VDSS
VDGR
VGS
TJ,Tstg
TL
Characteristic
Drain to Source Voltage
Drain to Gate Voltage
RGS=1.0M
Gate to Source Voltage
Operating Junction Temperature
Storage Temperature
Maximum Lead Temperature
for Soldering Purposes,
1/8” From Case for 5S
Rating
IRF340/342
IRF740/742
MTM8N40
400
400
±20
-55 to +150
275
Rating
IRF341/343
IRF741/743
MTM8N35
350
350
±20
-55 to +150
275
Maximum On-State Characteristics
RDS(on)
Static Drain-to-Source
On Resistance
ID Drain Current
Continuous
Pulsed
Maximum Thermal Characteristics
RӨJC
Thermal Resistance,
Junction to Case
PD Total Power Dissipation
at Tc=25
IRF340/341
IRF740/741
0.55
IRF342/343
IRF742/743
0.80
MTM8N35
MTM8N40
0.55
10 8
8
40 32 48
1.0 1.0 0.83
125 125 150
Notes
For Information concerning connection diagram and package outline, refer to
Section 7.
Unit
V
V
V
A
/W
W
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IRF340 Datasheet
Recommendation IRF340 Datasheet
Part IRF340
Description N-Channel Power MOSFETs
Feature IRF340; IRF340-343/IRF740-743 T-39-13 MTM8N35/8N40 N-Channel Power MOSFETs 10A, 350V/400V Description These.
Manufacture ART CHIP
Datasheet
Download IRF340 Datasheet




ART CHIP IRF340
IRF340-343/IRF740-743 T-39-13
MTM8N35/8N40
N-Channel Power MOSFETs
10A, 350V/400V
Electrical Characteristics (Tc=25 unless otherwise noted)
Symbol Characteristic
Min
Off Characteristics
V(BR)DSS
Drain-Source Breakdown Voltage1
IRF340/342/740/742
Irf341/343/741/743
400
350
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
IRF340-343
IRF740-743
On Characteristics
VGS(th)
Gate Threshold Voltage
RDS(on)
Static Drain-Source On-Resistance 2
IRF340/341/740/741
IRF342/343/742/743
gfs Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Tc=25 , Figures 9, 10)
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
2.0
4.0
Symbol Characteristic
Source-Drain Diode Characteristics
VSD Diode Forward Voltage
IRF340/341/740/741
Irf342/343/742/743
trr Reverse Recovery Time
TYP
600
Max
Unit
V
Test Conditions
VGS=0V, ID=250µA
250
1000
µA
µA
±100
±500
nA
VDS=Rated VDSS, VGS=0V
VDS=0.8 x Rated Vds,
VGS=0V, Tc=125
VGS=±20V, VDS=0V
4.0
0.55
0.80
1600
450
150
V
S( )
pF
pF
pF
ID=250µA, VDS=VGS
VGS=10V, ID=5.0A
VDS=10V, ID=5.0A
VDS=25V, VGS=0V
f=1.0MHz
35 ns VDD=175V, ID=5.0A
15 ns VGS=10V, RGEN=4.7
90 ns RGS=4.7
35 ns
60 nC VGS=10V, ID=12A
VDD=400V
Max Unit Test Conditions
2.0 V
1.9 V
ns
IS=10A; VGS=0V
IS=8A; VGS=0V
IS=10A; dIS/dt=100A/µS
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ART CHIP IRF340
IRF340-343/IRF740-743 T-39-13
MTM8N35/8N40
N-Channel Power MOSFETs
10A, 350V/400V
Electrical Characteristics (Tc=25 unless otherwise noted)
Symbol
Characteristic
Min
Off Characteristics
V(BR)DSS
Drain-Source Breakdown Voltage1
MTM8N40
MTM8N35
400
350
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS(on)
Drain-Source On-Voltage2
2.0
1.5
RDS(on)
gfs
Static Drain-Source On-Resistance2
Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (Tc=25 , Figures 9,10)3
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
3.0
Max
0.25
2.5
±500
4.5
4.0
2.2
5.3
4.4
0.55
1800
350
150
60
150
200
120
60
Notes
1. TJ=+25 to +150
2. Pulse test: Pulse width 80µs, Duty cycle1%
3. Switching time measurements performed on LEM TR-58 test equipment.
Unit
V
mA
mA
nA
V
V
V
V
V
S( )
pF
pF
pF
ns
ns
ns
ns
nC
Test Conditions
VGS=0V, ID=5.0mA
VDS=0.85 x Rated VDSS,
VGS=0V
VDS=0.85 x Rated VDSS,
VGS=0V, Tc=100
VGS=±20V, VDS=0V
ID=1.0mA, VDS=VGS
ID=1.0mA, VDS=VGS
Tc=100
VGS=10V; ID=4.0A
VGS=10V; ID=8.0A
VGS=10V, ID=4.0A
Tc=100
VGS=10V, ID=4.0A
VDS=10V, ID=4.0A
VDS=25V, VGS=0V
F=1.0MHz
VDD=25V, ID=4.0A
VGS=10V, RGEN=50
RGS=50
VGS=10V, ID=12A
VDD=400V
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