PowerTrenc MOSFET. FDMC7660DC Datasheet

FDMC7660DC Datasheet PDF, Equivalent


Part Number

FDMC7660DC

Description

N-Channel Dual Cool 33 PowerTrenc MOSFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMC7660DC Datasheet PDF


FDMC7660DC Datasheet
July 2015
FDMC7660DC
N-Channel Dual CoolTM 33 PowerTrench® MOSFET
30 V, 40 A, 2.2 mΩ
Features
General Description
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 2.2 mΩ at VGS = 10 V, ID = 22 A
„ Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A
„ High performance technology for extremely low rDS(on)
„ SyncFET Schottky Body Diode
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation
Pin 1
G
S
S
S
D5
D6
4G
3S
D
D
D
D
Top
Dual CoolTM 33
Bottom
D7
D8
2S
1S
MOSFET Maximum Ratings TA= 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
dv/dt
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 4)
(Note 1a)
(Note 3)
(Note 5)
(Note 1a)
Ratings
30
±20
40
150
30
200
220
1.0
78
3.0
-55 to + 150
Units
V
V
A
mJ
V/ns
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
4.3
1.6
42
105
17
26
12
°C/W
Device Marking
7660
Device
FDMC7660DC
©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.1.3
Package
Dual CoolTM 33
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com

FDMC7660DC Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current, Forward
ID = 250 μA, VGS = 0 V
ID = 250 μA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
ID = 250 μA, referenced to 25 °C
VGS = 10 V, ID = 22 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 22 A, TJ = 125°C
VDS = 5 V, ID = 22 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 22 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V,
ID = 22 A
Drain-Source Diode Characteristics
VSD Source-Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 22 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
IF = 22 A, di/dt = 100 A/μs
Min
30
1.2
Typ
15
2
-7
1.6
2.5
2.2
147
3885
1215
100
0.7
17
6.6
36
5
54
24
13
5.5
0.8
0.7
43
24
Max Units
V
mV/°C
1 μA
100 nA
2.5 V
mV/°C
2.2
3.3 mΩ
3.3
S
5170
1620
150
1.5
pF
pF
pF
Ω
31 ns
13 ns
58 ns
10 ns
76 nC
34 nC
nC
nC
1.2
V
1.2
69 ns
38 nC
©2011 Fairchild Semiconductor Corporation
FDMC7660DC Rev.1.3
2
www.fairchildsemi.com


Features Datasheet pdf FDMC7660DC N-Channel Dual CoolTM 33 Powe rTrench® MOSFET July 2015 FDMC7660DC N-Channel Dual CoolTM 33 PowerTrench® MOSFET 30 V, 40 A, 2.2 mΩ Features General Description „ Dual CoolTM Top Side Cooling PQFN package „ Max rDS(o n) = 2.2 mΩ at VGS = 10 V, ID = 22 A Max rDS(on) = 3.3 mΩ at VGS = 4.5 V, ID = 18 A „ High performance technolo gy for extremely low rDS(on) „ SyncFET Schottky Body Diode „ RoHS Compliant This N-Channel MOSFET is produced usin g Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package te chnologies have been combined to offer the lowest rDS(on) while maintaining ex cellent switching performance by extrem ely low Junction-to-Ambient thermal res istance. Applications „ Synchronous Re ctifier for DC/DC Converters „ Teleco m Secondary Side Rectification „ High End Server/Workstation Pin 1 G S S S D5 D6 4G 3S D D D D Top Dual C oolTM 33 Bottom D7 D8 2S 1S MOSFET Maximum Ratings TA= 25°.
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