Trench SyncFET. FDMC7672S Datasheet

FDMC7672S Datasheet PDF, Equivalent


Part Number

FDMC7672S

Description

N-Channel Power Trench SyncFET

Manufacture

Fairchild Semiconductor

Total Page 8 Pages
PDF Download
Download FDMC7672S Datasheet


FDMC7672S Datasheet
FDMC7672S
N-Channel Power Trench® SyncFETTM
30 V, 14.8 A, 6.0 m:
Features
General Description
September 2010
„ Max rDS(on) = 6.0 m: at VGS = 10 V, ID = 14.8 A
„ Max rDS(on) = 7.1 m: at VGS = 4.5 V, ID = 12.4 A
„ High performance technology for extremely low rDS(on)
„ Termination is Lead-free and RoHS Compliant
This FDMC7672S is produced using Fairchild Semiconductor’s
advanced Power Trench® process that has been especially
tailored to minimize the on-state resistance. This device is well
suited for Power Management and load switching applications
common in Notebook Computers and Portable Battery packs.
Applications
„ DC - DC Buck Converters
„ Notebook battery power mangement
„ Load switch in Notebook
Top Bottom
Pin 1
S SG
S
MLP 3.3x3.3
DD
D
D
D5
D6
D7
D8
4G
3S
2S
1S
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
-Continuous
-Pulsed
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 1a)
(Note 3)
(Note 1a)
Ratings
30
±20
18
14.8
45
60
36
2.3
-55 to +150
Units
V
V
A
mJ
W
°C
RTJC
RTJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Note 1a)
3.5
53
°C/W
°C/W
Device Marking
FDMC7672S
Device
FDMC7672S
Package
MLP 3.3X3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
1
www.fairchildsemi.com

FDMC7672S Datasheet
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min Typ Max Units
Off Characteristics
BVDSS
'BVDSS
'TJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
VDS = 24 V, VGS = 0 V
VGS = 20 V, VDS = 0 V
30
V
12 mVC
1 mA
100 nA
On Characteristics (Note 2)
VGS(th)
'VGS(th)
'TJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
1.2 1.6 3.0
V
ID = 10 mA, referenced to 25 °C
-6 mV/°C
VGS = 10 V, ID = 14.8 A
VGS = 4.5 V, ID = 12.4 A
VGS = 10 V, ID = 14.8 A
TJ = 125 °C
VDS = 5 V, ID = 14.8 A
5.0 6.0
6.1 7.1 m:
5.9 9.0
78 S
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 15 V, VGS = 0 V,
f = 1 MHz
1895
770
85
1.2
2520
1025
130
3.2
pF
pF
pF
:
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 15 V, ID = 14.8 A,
VGS = 10 V, RGEN = 6 :
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 15 V
ID = 14.8 A
11 21 ns
4 10 ns
26 42 ns
3 10 ns
30 42 nC
14 20 nC
5.3 nC
4.0 nC
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 14.8 A
VGS = 0 V, IS = 1.9 A
(Note 2)
(Note 2)
0.8 1.3
0.5 1.2
V
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
IF = 14.8 A, di/dt = 300 A/Ps
29 45 ns
28 44 nC
Notes:
1. RTJA is determined with the device mounted on a 1in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RTJC is guaranteed by design while RTCA is determined by
the user's board design.
a. 53 °C/W when mounted on a
1 in2 pad of 2 oz copper.
b. 125 °C/W when mounted on a
minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300 Ps, Duty cycle < 2.0%.
3. EAS of 60 mJ is based on starting TJ = 25 °C, L = 1 mH, IAS = 11 A, VDD = 27 V, VGS = 10 V. 100% test at L = 3 mH, IAS = 4.8 A.
©2010 Fairchild Semiconductor Corporation
FDMC7672S Rev.C3
2
www.fairchildsemi.com


Features Datasheet pdf FDMC7672S N-Channel Power Trench® SyncF ETTM FDMC7672S N-Channel Power Trench ® SyncFETTM 30 V, 14.8 A, 6.0 m: Fea tures General Description September 2 010 „ Max rDS(on) = 6.0 m: at VGS = 1 0 V, ID = 14.8 A „ Max rDS(on) = 7.1 m : at VGS = 4.5 V, ID = 12.4 A „ High p erformance technology for extremely low rDS(on) „ Termination is Lead-free an d RoHS Compliant This FDMC7672S is pro duced using Fairchild Semiconductor’s advanced Power Trench® process that h as been especially tailored to minimize the on-state resistance. This device i s well suited for Power Management and load switching applications common in N otebook Computers and Portable Battery packs. Applications „ DC - DC Buck Co nverters „ Notebook battery power mang ement „ Load switch in Notebook Top B ottom Pin 1 S SG S MLP 3.3x3.3 DD D D D5 D6 D7 D8 4G 3S 2S 1S MOSFET Ma ximum Ratings TA = 25 °C unless otherw ise noted Symbol VDS VGS ID EAS PD TJ, TSTG Parameter Drain to Source Voltage Gate to Source Volta.
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