PowerTrench SyncFET. FDMS2502SDC Datasheet

FDMS2502SDC Datasheet PDF, Equivalent


Part Number

FDMS2502SDC

Description

N-Channel Dual Cool PowerTrench SyncFET

Manufacture

Fairchild Semiconductor

Total Page 9 Pages
PDF Download
Download FDMS2502SDC Datasheet


FDMS2502SDC Datasheet
FDMS2502SDC
N-Channel Dual CoolTM PowerTrench® SyncFETTM
25 V, 49 A, 1.2 mΩ
July 2010
Features
General Description
„ Dual CoolTM Top Side Cooling PQFN package
„ Max rDS(on) = 1.2 mΩ at VGS = 10 V, ID = 35 A
„ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A
„ High performance technology for extremely low rDS(on)
„ SyncFET Schottky Body Diode
„ RoHS Compliant
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench® process.
Advancements in both silicon and Dual CoolTM package
technologies have been combined to offer the lowest rDS(on)
while maintaining excellent switching performance by extremely
low Junction-to-Ambient thermal resistance. This device has the
added benefit of an efficient monolithic Schottky body diode.
Applications
„ Synchronous Rectifier for DC/DC Converters
„ Telecom Secondary Side Rectification
„ High End Server/Workstation Vcore Low Side
Pin 1
S
S
S
G
D5
D6
4G
3S
D
D
D
D
Top
Power 56
Bottom
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
dv/dt
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous (Package limited)
-Continuous (Silicon limited)
-Continuous
-Pulsed
TC = 25 °C
TC = 25 °C
TA = 25 °C
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
D7
D8
(Note 4)
(Note 1a)
(Note 3)
(Note 5)
(Note 1a)
2S
1S
Ratings
25
±20
49
250
43
200
312
1.3
114
3.3
-55 to +150
Units
V
V
A
mJ
V/ns
W
°C
RθJC
RθJC
RθJA
RθJA
RθJA
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
Package Marking and Ordering Information
(Top Source)
(Bottom Drain)
(Note 1a)
(Note 1b)
(Note 1i)
(Note 1j)
(Note 1k)
2.7
1.1
38
81
16
23
11
°C/W
Device Marking
2502S
Device
FDMS2502SDC
©2010 Fairchild Semiconductor Corporation
FDMS2502SDC Rev.C
Package
Dual CoolTM Power 56
1
Reel Size
13’’
Tape Width
12 mm
Quantity
3000 units
www.fairchildsemi.com

FDMS2502SDC Datasheet
Electrical Characteristics TJ = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, VGS = 0 V
ID = 10 mA, referenced to 25 °C
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
Gate to Source Leakage Current, Forward VGS = 20 V, VDS = 0 V
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Static Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 1 mA
ID = 10 mA, referenced to 25 °C
VGS = 10 V, ID = 35 A
VGS = 4.5 V, ID = 31 A
VGS = 10 V, ID = 35 A, TJ = 125 °C
VDD = 5 V, ID = 35 A
Dynamic Characteristics
Ciss
Coss
Crss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
VDS = 13 V, VGS = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Qg
Qg
Qgs
Qgd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDD = 13 V, ID = 35 A,
VGS = 10 V, RGEN = 6 Ω
VGS = 0 V to 10 V
VGS = 0 V to 4.5 V VDD = 13 V,
ID = 35 A
Drain-Source Diode Characteristics
VSD Source to Drain Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
VGS = 0 V, IS = 2 A
VGS = 0 V, IS = 35 A
(Note 2)
(Note 2)
IF = 35 A, di/dt = 300 A/μs
Min
25
1.2
Typ
22
1.5
-5
0.9
1.2
1.2
212
6740
1940
314
0.6
20
9
48
5.3
95
43
18.6
8.8
0.37
0.74
44
68
Max Units
V
mV/°C
500 μA
100 nA
3.0 V
mV/°C
1.2
1.6 mΩ
1.7
S
8965
2580
475
1.3
pF
pF
pF
Ω
36 ns
18 ns
77 ns
11 ns
133 nC
60 nC
nC
nC
0.7
V
1.2
71 ns
109 nC
©2010 Fairchild Semiconductor Corporation
FDMS2502SDC Rev.C
2
www.fairchildsemi.com


Features Datasheet pdf FDMS2502SDC N-Channel Dual CoolTM PowerT rench® SyncFETTM FDMS2502SDC N-Channe l Dual CoolTM PowerTrench® SyncFETTM 2 5 V, 49 A, 1.2 mΩ July 2010 Features General Description „ Dual CoolTM T op Side Cooling PQFN package „ Max rDS (on) = 1.2 mΩ at VGS = 10 V, ID = 35 A „ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 31 A „ High performance techno logy for extremely low rDS(on) „ SyncF ET Schottky Body Diode „ RoHS Complian t This N-Channel MOSFET is produced us ing Fairchild Semiconductor’s advance d PowerTrench® process. Advancements i n both silicon and Dual CoolTM package technologies have been combined to offe r the lowest rDS(on) while maintaining excellent switching performance by extr emely low Junction-to-Ambient thermal r esistance. This device has the added be nefit of an efficient monolithic Schott ky body diode. Applications „ Synchron ous Rectifier for DC/DC Converters „ Telecom Secondary Side Rectification High End Server/Workstation Vcore Low Side Pin 1 S S S G D.
Keywords FDMS2502SDC, datasheet, pdf, Fairchild Semiconductor, N-Channel, Dual, Cool, PowerTrench, SyncFET, DMS2502SDC, MS2502SDC, S2502SDC, FDMS2502SD, FDMS2502S, FDMS2502, Equivalent, stock, pinout, distributor, price, schematic, inventory, databook, Electronic, Components, Parameters, parts, cross reference, chip, Semiconductor, circuit, Electric, manual, substitute




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)