KTA1659

isc Silicon PNP Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage VCEO= -160V(Min) ·Complement to Type KTC4370 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -160 V VCEO Collector-Emitter Voltage -160 V VEBO Emitter-Base Voltage -5.0 V IC(DC) Collector Current(DC) -1.5 A IB(DC) PC TJ Base Current Collector Power Dissipation @TC=25℃ Junction Temperature -0.15 A 20 W 150 ℃ Tstg Storage Temperature -55~150 ℃ KTA1659 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= -10mA; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= -500mA; IB= -50mA VBE(on) Base-Emitter On Voltage IC= -500mA; VCE= -5V ICBO Collector Cutoff Current VCB= -160V; IE= 0 IEBO Emitter Cutoff Current VEB= -5V; IC= 0 hFE DC Current Gain IC= -100mA; VCE= -5V  hFE Classifications O Y 70-140 120-240 KTA1659 MIN TYP. MAX UNIT -160 V -1.5 V -1.0 V -1.0 μA -1.0 μA 70 240 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applica...