KTD1945

isc Silicon NPN Power Transistor DESCRIPTION ·Low Saturation Voltage- : VCE(sat)= 0.5V(Max)@ IC= 2A ·High Collector Power Dissipation- : PC= 25W(Max) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 3 A IB Base Current-Continuous Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 0.5 A 2 W 25 150 ℃ Tstg Storage Temperature Range -55~150 ℃ KTD1945 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A VBE(on) Base-Emitter On Voltage IC= 0.5A ; VCE= 5V ICBO Collector Cutoff Current VCB= 60V ; IE=0 IEBO Emitter Cutoff Current VEB= 7V ; IC=0 hFE DC Current Gain IC= 0.5A ; VCE= 5V  hFE Classifications O Y GR 60-120 100-200 150-300 KTD1945 MIN TYP. MAX UNIT 60 V 0.5 V 1.0 V 100 μA 100 μA 60 300 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information...