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KTD2059
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 100V(Min) ·Collector Power Dissipation- : PC= 30W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 2.0V(Max)@ (IC= 4A, IB= 0.4A) ·Complement to Type KTB1367 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·De...
Inchange Semiconductor
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