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KTD2060
Silicon NPN Power Transistors
Description
isc Silicon
NPN
Power
Transistor
DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min) ·Collector Power Dissipation- : PC= 25W@ TC= 25℃ ·Low Collector Saturation Voltage- : VCE(sat)= 1.5V(Max)@ (IC= 3A, IB= 0.3A) ·Complement to Type KTB1368 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Des...
Inchange Semiconductor
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