INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
KTD3055
DESCRIPTION ·Collector-Emitt...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KTD3055
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min) ·Complement to Type KTB2955
APPLICATIONS ·High power amplifier applications ·Recommended for 30~35W audio frequency amplifier output
stage application.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
120 V
VCEO
Collector-Emitter Voltage
120 V
VEBO
Emitter-Base Voltage
5V
IC Collector Current-Continuous
10 A
IB Base Current
PC
Collector Power Dissipation @TC=25℃
TJ Junction Temperature
1A 40 W 150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.com
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
KTD3055
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)CEO Collector-Emitter Breakdown Voltage...