MBV109T1

ON Semiconductort Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. High Q with Guaranteed Minimum Values at VHF Frequencies Controlled and Uniform Tuning Ratio Available in Surface Mount Package MAXIMUM RATINGS Rating Symbol MBV109T1 MMBV109LT1 MV209 Unit Reverse Voltage Forward Current Forward Power Dissipation @ TA = 25°C Derate above 25°C VR IF PD 280 2.8 30 200 200 2.0 Vdc mAdc 200 mW 1.6 mW/°C Junction Temperature Storage Temperature Range TJ Tstg +125 –55 to +150 °C °C DEVICE MARKING MBV109T1 = J4A, MMBV109LT1 = M4A, MV209 = MV209 MBV109T1 MMBV109LT1 * MV209* * ON Semiconductor Preferred Devices 26–32 pF VOLTAGE VARIABLE CAPACITANCE DIODES 3 1 2 CASE 419–04, STYLE 3 SC–70/SOT–323 3 1 2 CASE 318–08, STYLE 6 SOT–23 (TO–236AB) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.) Characteristic Symbol Min T...