MJ1800

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification MJ1800 DESCRIPTION ·High Collector-Emitter Voltage ·Good Linearity of hFE APPLICATIONS ·Designed for use in vertical deflection amplifier circuits in television receivers. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 250 V VCBO Collector- Base Voltage 500 V VEBO Emitter-Base Voltage 5V IC Collector Current-Continuous 5A PC Collector Power Dissipation@TC=25℃ 100 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance,Junction to Case MAX 1.25 UNIT ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification MJ1800 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakd...