CDBN0130

SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBN0130 Io = 100mA V R = 30 Volt s Features Designed for mounting on small surface Extremely thin package Low stored charge Majority carrier conduction 0.126(3.20) 0.118(3.00) 0.020(0.50) Typ. 1206 (3216) Mechanical data Case: 1206(3216) Standard package, molded plastic Terminals: Solder plated, solderable per MIL-STD-750, method 2026. Polarity: Indicated by cathode band. Mounting position: Any. Weight: 0.0085 gram.(approximately) 0.010(R0.25) Typ. 0.063(1.60) 0.055(1.40) 0.043 (1.10) 0.035(0.90) Dimensions in inches and (millimeter) Maximum Rating ( at T A = 25 C unless otherwise noted ) Parameter Repetitive peak reverse voltage Reverse voltage Average forward current Forward current , surge peak Power dissipation Storage temperature Junction temperature 8.3 ms single half sine-wave superimposed on rate load ( JEDEC method ) Conditions Symbol Min Typ Max Unit V RRM VR Io I FSM 1000 PD T STG Tj -40 -40 250 +125 +125 mW C C 35 30 100 V V mA mA Electrical Characteristics ( at T A = 25 C unless otherwise noted ) Parameter Forward voltage Reverse current Capacitance between terminals V R = 30 V f = 1MHz, and 10 VDC reverse voltage Conditions I F = 1 00 mA DC Symbol Min Typ Max Unit VF IR CT 10 0.44 30 V uA pF RDS0208008-C Page 1 SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw RATING AND CHARACTERISTIC CURVES (CDBN0130) Fig. 1 - Forward characteristics 1000 1m Fig. 2 - Reverse characteristics Forward...