BUL128D

Inchange Semiconductor Silicon NPN Power Transistors DESCRIPTION ·With TO-220C package ·High voltage ,high speed ·Integrated antiparallel collector-emitter diode APPLICATIONS ·Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings(Ta=25℃) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage VEBO Emitter-base voltage IC Collector current ICM Collector current-Peak (tp<5 ms) IB Base current IBM Base current-Peak (tp<5 ms) PT Total power dissipation Tj Junction temperature Tstg Storage temperature CONDITIONS Open emitter Open base Open collector TC=25℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-C Thermal resistance from junction to case Product Specification BUL128D · VALUE 700 400 9 4 8 2 4 70 150 -65~150 UNIT V V V A A A A W ℃ ℃ VALUE 1.78 UNIT ℃/W Inchange Semiconductor Silicon N...