INCHANGE Semiconductor
isc Silicon NPN Power Transistors
isc Product Specification
BUS131/A
DESCRIPTION High Switching...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistors
isc Product Specification
BUS131/A
DESCRIPTION High Switching Speed ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)-BUS131 500V (Min)-BUS131A
APPLICATIONS ·Designed for use in very fast switching applications in
inductive circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCES
Collector- Emitter Voltage(VBE= 0)
BUS131 BUS131A
850 1000
V
VCEO
Collector-Emitter Voltage
BUS131 BUS131A
450 500
V
VEBO IC ICM IB IBM PC Tj Tstg
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature
Storage Temperature Range
9 5 10 4 8 125 200 -65~200
V A A A A W ℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 1.4 ℃/W
·
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INCHANGE Semiconductor
isc Silicon N...
