BUS22C

INCHANGE Semiconductor isc Silicon NPN Power Transistors isc Product Specification BUS22B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min)-BUS22B 450V (Min)-BUS22C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS22B BUS22C 750 850 V VCEO Collector-Emitter Voltage BUS22B BUS22C 400 450 V VEBO IC ICM IBB IBM PC Tj Tstg Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current-Continuous Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature Range 9 8 20 4 6 125 200 -65~200 V A A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Silicon NPN Power Transisto...