BUS23

isc Silicon NPN Power Transistors BUS23/A DESCRIPTION · High Switching Speed ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 300V (Min)-BUS23 350V (Min)-BUS23A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCES Collector- Emitter Voltage(VBE= 0) BUS23 550 V BUS23A 650 VCEO Collector-Emitter Voltage BUS23 300 V BUS23A 350 VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous 15 A ICM Collector Current-Peak 30 A IB Base Current-Continuous 6 A IBM Base Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 9 A 175 W 200 ℃ Tstg Storage Temperature Range -65~200 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistors ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BUS23 BUS23A IC= 50mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BUS23 IC= 10A; IB= 1.33A BUS23A IC= 10A; IB= 1.67A VBE(sat) Base-Emitter Saturation Voltage BUS23 IC= 10A; IB= 1.33A BUS23A IC= 10A; IB= 1.67A ICES Collector Cutoff Current VCE=VCESMmax; VBE= ...