isc Silicon NPN Power Transistor
DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed
·M...
isc Silicon
NPN Power
Transistor
DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed
·Minimum Lot-to-Lot variations for robust device performance and reliable operation
APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are particulary suited for line-operated swtchmode applications
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCEV
Collector-Emitter Voltage (VBE= -1.5V)
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
IBM
Base Current-peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
VALUE UNIT
1000
V
450
V
7
V
15
A
30
A
5
A
20
A
175
W
200
℃
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.0 ℃/W
BUS48A
isc website：www.iscsemi.com
1 isc & iscsemi is registered trademark
isc Silicon
NPN Power
Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 1mA; IC= 0
VCE(sat)-1
Collector-Emitter Saturation Voltage
IC= 8A; IB= 1.6A IC= 8A; IB= 1.6A;TC= 100℃
VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 12A ;IB= 2.4A
VBE(sat) Base-Emitter Saturation Voltage
ICBO
C...
