isc Silicon NPN Power Transistor
isc Product Specification
BUX98C
DESCRIPTION ·High Voltage Capability ·High Current C...
isc Silicon
NPN Power
Transistor
isc Product Specification
BUX98C
DESCRIPTION ·High Voltage Capability ·High Current Capability ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation
APPLICATIONS ·High frequency and efficiency converters ·Linear and switching industrial equipment
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1200
V
VCEO
Collector-Emitter Voltage
700 V
VEBO
Emitter-Base Voltage
7V
IC Collector Current-Continuous
30 A
ICM Collector Current-peak ( tp <5 ms ) 60
A
IB Base Current-Continuous
8A
IBM Base Current-peak ( tp <5 ms )
PC
Collector Power Dissipation @TC=25℃
Tj Junction Temperature
30 A 250 W 200 ℃
Tstg Storage Temperature Range
-65~200 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance, Junction to Case 0.7 ℃/W
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