SiC- JFET
Silicon Carbide- Junction Field Effect Transistor
CoolSiC™
1200 V CoolSiC™ Power Transistor IJW120R070T1
Final...
SiC- JFET
Silicon Carbide- Junction Field Effect
Transistor
CoolSiC™
1200 V CoolSiC™ Power
Transistor IJW120R070T1
Final Datasheet
Rev. 2.0, <2013-09-11>
Power Management & Multimarket
1200 V Silicon Carbide JFET
Description
CoolSiC™ is Infineon’s new family of active power switches based on silicon carbide. Combining the excellent material properties of silicon carbide with our normally-on JFET concept allows the next steps towards higher performance paired with very high ruggedness. The extremely low switching and conduction losses make applications even more efficient, compact, lighter and cooler.
IJW120R070T1
Features
Ultra fast switching Internal fast body diode Low intrinsic capacitance Low gate charge 175 °C maximum operating temperature
Gate
Drain
Source
Drain Pin 2
Gate Pin 1
Benefits
Enabling higher system efficiency and/ or higher output power in same housing Enabling higher frequency / increased power density solutions Syste...