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CDBW1100 Dataheets PDF



Part Number CDBW1100
Manufacturers Comchip Technology
Logo Comchip Technology
Description Surface Mount Schottky Barrier Rectifier
Datasheet CDBW1100 DatasheetCDBW1100 Datasheet (PDF)

Surface Mount Schottky Barrier Rectifier COMCHIP www.comchiptech.com CDBW120 THRU CDBW1100 Voltage Range 20 to 100V Current 1.0 Ampere Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic SOD-123 Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-750 method 2026 Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.01 gram .028(0.70) .019(0.50) SOD-123 .154(3.90) .14.

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Surface Mount Schottky Barrier Rectifier COMCHIP www.comchiptech.com CDBW120 THRU CDBW1100 Voltage Range 20 to 100V Current 1.0 Ampere Features Low forward voltage drop High current capability High reliability High surge current capability Mechanical Data Case: Molded plastic SOD-123 Epoxy: UL 94V-0 rate flame retardant Terminals: Solderable per MIL-STD-750 method 2026 Polarity:Color band denotes cathode end Mounting position: Any Weight: 0.01 gram .028(0.70) .019(0.50) SOD-123 .154(3.90) .141(3.60) .110(2.80) .098(2.50) .071(1.80) .008(0.20)Max. .005(0.12)Max. .016(0.40)Min. Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Rating at 25oC ambient temperature unless otherwise specified. Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. SYBMOL Maximum Recurrent Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current TL=100 C Peak Forward Surge Current, 8.3ms single Half sine-wave superimposed on rated load (JEDEC Method) Maximum Instantaneous Forward Voltage @ 1.0 A Maximum DC Reverse Current @TJ=25 C At Rated DC Blocking Voltage @TJ=100 C Typical junction Capacitance (Note 1) Operating Junction and Storage Temperature Range o o o CDBW120 CDBW140 CDBW160 CDBW180 CDBW1100 UNIT VRRM VRMS VDC I(AV) 20 14 20 40 28 40 60 42 60 1.0 80 56 80 .053(1.35) .037(0.95) 100 70 100 .055(1.40) V V V A IFSM 30 A VF IR CJ TJ, TSTG 0.5 0.7 0.5 10 120 -55 to +125 / -55 to +150 0.85 V mA pF o 5.0 C NOTES : (1) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC. MDS0407008A Page 1 Surface Mount Schottky Barrier Rectifier COMCHIP www.comchiptech.com RATINGS AND CHARACTERISTIC CURVES CDBW120 THRU CDBW1100 FIG.1 - FORWARD CURRENT DERATING CURVE 1.0 30 FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES Pulse Width 8.3ms Single Half-Sire-Wave (JEDEC Method) AVERAGE FORWARD RECTIFIED CURRENT, AMPERES 0.8 25 20 0.6 15 0.4 10 0.2 60 Hz Resistive or Inductive load 5 0 0 50 100 o 0 150 1 10 100 LEAD TEMPERATURE, C NUMBER OF CYCLES AT 60Hz FIG.3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS IINSTANTANEOUS FORWARD CURRENT, AMPERES 10 FIG.4 - TYPICAL REVERSE CHARACTERISTICS 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES CDBW120-140 CDBW160 TJ=100 C o 10 1.0 CDBW180-1100 0.1 1 0.1 0.01 TJ=25 C o 0.01 0.2 0.4 0.6 0.8 TJ=25 C PULSE WIDTH=300uS 1% DUTY CYCLE o 0.001 0 20 40 60 80 100 1.0 1.2 1.4 1.6 INSTANTANEOUS FORWARD VOLTAGE, VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE,% FIG.5 - TYPICAL JUNCTION CAPACITANCE 1000 TJ = 25 C f = 1.0 MHZ Vsig = 50mVp-p o 100 10 0.1 1.0 4.0 10 100 REVERSE VOLTAGE, VOLTS MDS0407008A Page 2 .


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