2SD1245

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High DC Current Gain : hFE= 500(Min) @IC= 2A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and Motor control ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous ICM Collector Current-Peak PC Collector Power Dissipation TC=25℃ Tj Junction Temperature Tstg Storage Temperature Range VALUE UNIT 500 V 400 V 5 V 6 A 10 A 40 W 150 ℃ -55~150 ℃ 2SD1245 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA; IB= 0 V(BR)EBO Emitter -Base Breakdown Voltage IE= 5mA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 60mA VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 60mA ICBO Collector Cutoff Current VCB= 400V; IE= 0 ICEO Collector Cutoff Current VCE= 400V; IB= 0 hFE DC Current Gain IC= 2A; VCE= 2V 2SD1245 MIN TYP. MAX UNIT 400 V 5 V 1.5 V 2.5 V 100 μA 1 mA 500 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. T...