2SD1684

isc Silicon NPN Power Transistor DESCRIPTION ··Low Collector Saturation Voltage : VCE(sat)= -0.5V(Max)@IC= -0.5A ·Wide Area of Safe Operation ·Complement to Type 2SB1144 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1.5 A ICP Collector Current-Pulse Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 A 10 W 1.5 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SD1684 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 10uA; IE= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10μA; IC= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA VBE(sat) Base-Emitter Saturation Voltage IC= 500mA; IB= 50mA ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain IC= 1A; VCE= 5V fT Current-Gain—Bandwidth Product IC= 0.5A; VCE= 5V COB Out...