isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD2118
DESCRIPTION ·High current capacity ·Small and slim pac...
isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD2118
DESCRIPTION ·High current capacity ·Small and slim package making it easy to make 2SD2118-used set smaller ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Strobes,voltage
regulators,relay drivers,lamp drivers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
50
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
6
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
PC
Collector Power Dissipation
10
W
TJ
Junction Temperature
150
℃
Tstg
Storage Temperature Range
-55~150
℃
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isc Silicon
NPN Power
Transistor
INCHANGE Semiconductor
2SD2118
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 4A; IB= 100mA
V(BR)CBO Collector-Base Breakdown Voltage IC= 50uA; IB= 0
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 50uA; IC= 0
ICBO
Collector Cutoff Current
VCB= 40V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0.5A; VCE= 2V
COB
Output Capacitance
IE= 0; VCB= 20V; f= 1.0MHz
fT
Current-Gain—Bandwidth Product IC= 50mA; VCE= ...