2SD2165

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage : VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use low frequency amplifilier and low switching speed applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB Base Current-Continuous Collector Power Dissipation @Ta=25℃ PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 1 A 2 W 30 150 ℃ Tstg Storage Temperature -55~150 ℃ 2SD2165 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor 2SD2165 ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA 1 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 30mA 1.5 V ICBO Collector Cutoff Current VCB= 60V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 7V; IC= 0 10 mA hFE -1 DC Current Gain IC= 1A; VCE= 5V 800 3200 hFE-2 DC Current Gain IC= 3A; VCE= 5V 500 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V 110 MHz Cob Output Capaci...