isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low ...
isc Silicon
NPN Darlington Power
Transistor
DESCRIPTION ·High DC Current Gain-
: hFE= 800(MIN)@ (VCE= 5V, IC= 1A) ·Low Collector-Emitter Saturation Voltage
: VCE(sat) =1V(MIN)@ (IC = 3V, IB= 30mA) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use low frequency amplifilier and low switching speed applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO
Collector-Emitter Voltage
100
V
VEBO
Emitter-Base Voltage
7
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
1
A
2 W
30
150
℃
Tstg
Storage Temperature
-55~150
℃
2SD2165
isc website:www.iscsemi.com
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isc Silicon
NPN Darlington Power
Transistor
2SD2165
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 30mA
1
V
VBE(sat) Base-Emitter Saturation Voltage
IC= 3A; IB= 30mA
1.5
V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
10 μA
IEBO
Emitter Cutoff Current
VEB= 7V; IC= 0
10 mA
hFE -1
DC Current Gain
IC= 1A; VCE= 5V
800
3200
hFE-2
DC Current Gain
IC= 3A; VCE= 5V
500
fT
Current-Gain—Bandwidth Product
IC= 0.1A; VCE= 5V
110
MHz
Cob
Output Capaci...