2SD2633

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 6A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 100V(Min) ·Low Collector-Emitter Saturation Voltage- : VCE(sat) =1.5V(Max)@ IC= 6A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose amplifier and low speed switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 8 A IB Base Current Collector Power Dissipation PC TC=25℃ Collector Power Dissipation Ta=25℃ Tj Junction Temperature 1 A 35 W 2 150 ℃ Tstg Storage Temperature Range -65~150 ℃ 2SD2633 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A ,IB= 6mA VBE(sat) Base-Emitter Saturation voltage IC= 6A ,IB= 6mA ICBO Collector Cutoff Current VCB= 200V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE DC Current Gain IC= 6A ; VCE= 2V 2SD2633 MIN TYP. MAX UNIT 150 V 1.5 V 2.0 V 0.1 mA 10 mA 2000 Notice： ISC reserves the rights to make changes of the content...