isc Silicon NPN Power Transistor
DESCRIPTION ·High speed. ·High breakdown voltage(VCBO=1500V). ·High reliability(Adoption of HVP process). ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for Color TV Horizontal Deflection
Output Applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VA...
