2SD469

isc Silicon NPN Darlingtion Power Transistor DESCRIPTION · Low Collector-Emitter Breakdown Voltage V(BR)CEO= 110V (Min) ·Collector Power Dissipation ·Pc=100W@TC=25℃ ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(TC=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 110 V VEBO Emitter-Base Voltage 10 V IC Collector Current -Continuous 10 A PC Collector Power Dissipation@TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SD469 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlingtion Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A VBE(sat) Base-Emitter Saturation voltage IC= 3A; IB= 0.3A ICBO Collector Cutoff current VCB= 150V; IE=0 IEBO Emitter Cut-off current VEB= 8V; IC= 0 hFE DC Current Gain IC= 1A ; VCE= 5V 2SD469 MIN MAX UNIT 110 V 1.0 V 1.5 V 100 μA 0.1 mA 40 80 200 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the...