2STD1665

isc Silicon NPN Power Transistor 2STD1665 DESCRIPTION ·Low collector saturation voltage ·High current gain characteristics ·Fast-switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Voltage regulators ·High efficiency low voltage switching ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 150 V VCEO Collector-Emitter Voltage 65 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 6 A ICM Collector Peak Current PC Collector Power Dissipation 20 A 15 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat)-1NOTE Collector-Emitter Saturation Voltage IC= 0.1A; IB= 5mA VCE(sat)-2NOTE Collector-Emitter Saturation Voltage IC= 1.0A; IB= 50mA VCE(sat)-3NOTE Collector-Emitter Saturation Voltage IC= 2.0A; IB= 50mA VCE(sat)-4NOTE Collector-Emitter Saturation Voltage IC= 6.0A; IB= 150mA VCE(sat)-5NOTE Collector-Emitter Saturation Voltage IC= 6A; IB= 300mA VBE(sat)NOTE Base-Emitter Saturation Voltage VBE(ON)NOTE Base-Emitter On Voltage IC= 4A; IB= 200mA IC= 4A;VCE=1V ICBO Collector Cutoff Current VCB= 120V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE-1 DC Current Gain IC= 10mA;...