BD180

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company EPITAXIAL SILICON POWER TRANSISTORS BD175 BD177 BD179 NPN BD176 BD178 BD180 PNP ECB Intended for use in Medium Power Linear Switching Applications TO126 Plastic Package ABSOLUTE MAXIMUM RATINGS DESCRIPTION Collector -Emitter Voltage Collector -Base Voltage Emitter Base Voltage Collector Current Collector Peak Current Power Dissipation @ Ta=25ºC Derate above 25ºC Power Dissipation @ Tc=25ºC Operating and Storage Junction Temperature Range SYMBOL VCEO VCBO VEBO IC ICM PD PD Tj, Tstg BD175 BD176 45 45 BD177 BD178 60 60 5.0 3.0 7.0 1.25 10 30 - 65 to +150 BD179 BD180 80 80 UNIT V V V A A W mW/ºC W ºC THERMAL CHARACTERISTICS Junction to Ambient in free air Junction to Case Rth (j-a) Rth (j-c) ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION Collector Cut off Current ICBO VCB=45V, IE=0 VCB=60V, IE=0 Emitter Cut off Current Colle...