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BD369

Inchange Semiconductor

Silicon PNP Power Transistor


Description
isc Silicon PNP Power Transistors DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)=-1.0V(Max)@ IC=-10A ·DC Current Gain- : hFE= 20(Min)@IC=-10A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general purpose power amplifier and switching applicati...



Inchange Semiconductor

BD369

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