BD791

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BD791/D NPN Plastic Silicon Power Transistor . . . designed for low power audio amplifier and low–current, high speed switching applications. High Collector–Emitter Sustaining Voltage — VCEO(sus) = 100 Vdc (Min) High DC Current Gain @ IC = 200 mAdc hFE = 40–250 Low Collector–Emitter Saturation Voltage — VCE(sat) = 0.5 Vdc (Max) @ IC = 500 mAdc High Current Gain — Bandwidth Product — fT = 40 MHz (Min) @ IC = 100 mAdc) ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎΗ Peak ÎÎÎÎÎÎ...