BD943

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 85(Min)@ IC= 500mA ·Complement to Type BD944/946/948 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in audio output stages and general purpose amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE BD943 22 VCBO Collector-Base Voltage BD945 32 BD947 45 VCEO Collector-Emitter Voltage BD943 22 BD945 32 BD947 45 VEBO Emitter-Base Voltage 5 IC Collector Current-Continuous 5 ICM Collector Current-Peak 8 IB Base Current-Continuous 1 PC Collector Power Dissipation @ TC=25℃ 40 TJ Junction Temperature 150 Tstg Storage Temperature Range -65~150 UNIT V V V A A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 3.12 ℃/W Rth j-a Thermal Resistance,Junction to Ambient 70 ℃/W BD943/945/947 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor BD943/945/947 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage BD943 BD945 BD947 IC= 30mA ; IB= 0 VCE(sat) Collector-Emitter Saturation Voltage BD943/945 IC= 2A; IB= 0.2A BD947 IC= 3A; IB= 0.3A VBE(on) ICBO ICEO Base-Emitter On Voltage BD943/945 BD947 Collector Cutoff Current Collector Cutoff Current BD943 BD945 BD947 IC= 2A; VCE= 1V IC...