2SB1316

isc Silicon PNP Power Transistor DESCRIPTION ·Darlington connection for high DC current gain ·Built in resistor between base and emitter ·Built in damper diode ·Complementary NPN types:2SD1980 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Motor drivers,LED driver,Power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -100 V VCEO Collector-Emitter Voltage -100 V VEBO Emitter-Base Voltage -8 V IC Collector Current-Continuous -2.0 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature -3.0 A 10 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SB1316 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon PNP Power Transistor 2SB1316 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVCBO Collector-Base breakdown voltage IC=-50uA MIN TYP. MAX UNI T -100 V BVCEO Collector-Emitter breakdown voltage IC=-5mA -100 V BVEBO Emitter-Base breakdown voltage IE=-3mA -10 V VCE(sat) Collector-Emitter Saturation Voltage IC= -1A; IB= -1mA ICBO Collector Cutoff Current VCB= -100V; IE= 0 IEBO Emitter Cutoff Current VEB= -7V; IC= 0 -1.5 V -10 μA -3.0 mA hFE DC Current Gain IC= -1A; VCE= -2V 1000 10000 COB Output Capacitance IE= 0; VCB= -10V; f= 1.0MHz 35 pF fT Current-Gain—Bandwidth Product IC= ...