INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SC1728
DESCRIPTION ·Collector-Emitt...
INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC1728
DESCRIPTION ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 50V(Min) ·Low Saturation Voltage -
: VCE(sat)= 0.3V(Max)@ IC=1A, IB= 50mA ·High DC Current Gain-
: hFE= 98-649@ IC= 0.1A
APPLICATIONS ·Designed for audio frequency amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100 V
VCEO
Collector-Emitter Voltage
50 V
VEBO
Emitter-Base Voltage
6V
ICM Collector Current-Peak
1.5 A
IB Base Current-Continuous
Collector Power Dissipation @ Ta=25℃ PC Collector Power Dissipation @ TC=25℃
TJ Junction Temperature
0.5 A
0.95 W
7.9
150 ℃
Tstg Storage Temperature Range
-50~150 ℃
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INCHANGE Semiconductor
isc Silicon
NPN Power
Transistor
isc Product Specification
2SC1728
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise spec...