2SC3303

isc Silicon NPN Power Transistor DESCRIPTION ·High switching speed time ·Low collector-to-emitter saturation voltage ·Fast switching speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation 1.0 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3303 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 3.0A; IB= 150mA VBE(sat) Base-Emitter Saturation Voltage IC= 3.0A; IB= 150mA V(BR)CBO Collector-Base Breakdown Voltage IC= 100uA; IB= 0 V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 100uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE1 DC Current Gain IC= 1A; VCE= 1V hFE2 DC Current Gain IC= 3A; VCE= 1V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 1A; VCE= 4V  hFE1 Classifications O Y 70-140 120-240 2SC3303 MIN TYP. MAX UNIT ...