2SC3640

isc Silicon NPN Power Transistor DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min) ·Fast Speed ·High reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 8 A ICP Collector Current- Pulse Pc Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 16 A 140 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC3640 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-Emitter Breakdown Voltage IC= 100mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.2A VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.2A ICBO Collector Cutoff Current VCB= 1200V ; IE= 0 IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 hFE-1 DC Current Gain IC= 1.2A ; VCE= 5V 2SC3640 MIN TYP. MAX UNIT 800 V 1200 V 5 V 1.5 V 100 μA 1 mA 8 Notice： ISC reserves the rights to make changes of the content herein the datasheet at any time without notificati...