2SC4001

isc Silicon NPN Power Transistor DESCRIPTION ·The 2SC4001is designed for uses of high-resolution monitor TV applications.This makes it possible to raise the video band Of high-resolution monitor TVs to 50MHz. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation FEATURES ·Collector–Emitter Sustaining Voltage- : VCBO = 300 V(Min) ·Complement to Type 2SA1546 ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 250 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous PC Collector Power Dissipation TC=25℃ Ti Junction Temperature 0.1 A 7 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC4001 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC =25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS ICBO Collector Cutoff Current VCB= 200V; IE= 0 IEBO Emitter Cutoff Current VEB= 3V; IC= 0 hFE DC Current Gain IC= 10m A ; VCE=10V VCE(sat) Collector-Emitter Saturation Voltage IC= 10mA ;IB=1mA VBE(sat) Base-Emitter Saturation Voltage IC= 10mA ;IB= 1mA fT Current-Gain—Bandwidth Product IE= 30mA ; VCE= 30V COB Output Capacitance IE= 0 ; VCB= 30V;ftest= 1.0MHz  hFE Classifications M L K 60-120 100-200 160-300 2SC4001 MIN MAX UNIT 100 nA 100 nA 60 300 0.3 V 1.2 V 200 MHz 3.5 pF NOTICE： ISC reserves the rights to mak...