2SC4134

isc Silicon NPN Power Transistor 2SC4134 DESCRIPTION ·High voltage and large current capacity ·Fast-speed switching ·Small and slim package permitting 2SC4134-applied sets to be made more compact ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power supplies,relay drivers,lamp drivers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 1 A ICM Collector Current-Peak Collector Power Dissipation PC @ TC=25℃ Collector Power Dissipation @Ta=25℃ TJ Junction Temperature 2 A 10 W 0.8 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 0.4A; IB= 40mA VBE(sat) Base-Emitter Saturation Voltage IC= 0.4A; IB= 40mA V(BR)CEO Collector-Emitter Breakdown Voltage IC= 1mA; IB= 0 V(BR)EBO Emitter-Base Breakdown Voltage IE= 10uA; IC= 0 ICBO Collector Cutoff Current VCB= 100V; IE= 0 IEBO Emitter Cutoff Current VEB= 4V; IC= 0 hFE DC Current Gain IC= 0.1A; VCE= 5V COB Output Capacitance IE= 0; VCB= 10V; f= 1.0MHz fT Current-Gain—Bandwidth Product IC= 100mA; VCE= 10V  hFE Classifications R...