2SC5252

isc Silicon NPN Power Transistor DESCRIPTION ·High speed switching High breakdown voltage VCBO = 1500 V ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Character display horizontal deflection output ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 6 V IC Collector Current- Continuous 15 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 30 A 50 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5252 isc website： www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor 2SC5252 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 10A; IB= 3A 5.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 10A; IB= 3A 1.5 V ICBO Collector Cutoff Current VCB= 1500V; IE= 0 0.5 mA IEBO Emitter Cutoff Current VEB= 6V ; IC= 0 1 mA hFE-1 DC Current Gain IC= 1A ; VCE= 5V 8 35 hFE-2 DC Current Gain IC= 8A ; VCE= 5V 3 6 fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 5V; ftest= 1.0MHz 5 MHz NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The informa...