2SC5265

isc Silicon NPN Power Transistor DESCRIPTION ·High Breakdown Voltage-(Vcb=1200V) · High Reliability ·Adoption of MBIT process ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Inverter-controlled ·Lighting ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1200 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 9 V IC Collector Current- Continuous 4 A ICM Collector Current-Peak PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 8 A 30 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ 2SC5265 isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 10mA ; IB=0 VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A ICES Collector Cutoff Current VCE= 1200V ; RBE= 0 ICBO Collector Cutoff Current VCB= 600V ; IE= 0 IEBO Emitter Cutoff Current VEB= 9V ; IC= 0 hFE-1 DC Current Gain IC= 0.3A ; VCE= 5V hFE-2 DC Current Gain IC= 1.5A ; VCE= 5V 2SC5265 MIN TYP. MAX UNIT 600 V 1.0 V 1.5 V 1.0 mA 10 uA 1.0 mA 30 50 10 NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contain...